產品展示
?適用領域：集成電路、先進封裝 Relevant Industries: Integrated Circuits, Advanced Packaging ?適用材料：Si Suitable for Processing: Silicon (Si) ?晶圓尺寸：12/8 英寸 Wafer Size: 12/8 inch ?適用工藝：氮化硅(SiN)、二氧化硅(SiO2)等膜層的沉積 Silicon Nitride (SiN)、 Silicon Dioxide（SiO2）, and other film layers
? 適用領域：集成電路、先進封裝、化合物半導體 Relevant Industries: Integrated Circuits, Advanced Packaging, Compound Semiconductors ? 適用材料: ?Si、SiC、GaN Suitable for Processing: Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN) ? 晶圓尺寸：12/8 英寸 Wafer Size: 12/8 inch ? 適用工藝：氧化(Oxidation)、退火(Annealing)、固化(Polyimide)、 合金(Alloy)、擴散(Diffusion) Applicable Processes: Oxidation, Annealing, Polyimide Curing, Alloy, Diffusion
適用領域：集成電路、先進封裝 Relevant Industries: Integrated Circuits, Advanced Packaging 適用材料: ?Si Suitable for Processing: Silicon (Si) 晶圓尺寸：12/8 英寸 Wafer Size:12/8 inch 適用工藝：氮化硅(SiN)、多晶硅(Poly-Si/U-Poly/D-Poly)、 二氧化硅(TEOS)等 Applicable Processes: Silicon Nitride (SiN) Deposition, Polysilicon(Poly-Si / U-Poly /D-Poly) Deposition, Silicon Dioxide (TEOS) Deposition etc.
?適用領域：集成電路、先進封裝 Relevant Industries: Integrated Circuits, Advanced Packaging ?適用材料：Si Suitable for Processing: Silicon (Si) ?晶圓尺寸：12/8 英寸 Wafer Size: 12/8 inch ?適用工藝：氮化硅(SiN)、多晶硅(Poly-Si/U-Poly/D-Poly)、二氧化硅(TEOS)、HTO等 Applicable Processes: Silicon Nitride (SiN) Deposition, Polysilicon (Poly-Si / U-Poly / D-Poly) Deposition, Silicon Dioxide (TEOS) Deposition, HTO, etc.
? 適用領域： ?集成電路、先進封裝 Relevant Industries: Integrated Circuits, Advanced Packaging ? 適用材料: ?Si Suitable for Processing: Silicon (Si) ?晶圓尺寸: ?12/8英寸 Wafer Size: 12/8 inch ?適用工藝: ?氧化(Oxidation)、退火(Annealing)、固化(Polyimide)、合金(Alloy)、擴散(Diffusion) Applicable Processes: ?Oxidation, Annealing, Polyimide Curing, Alloy, Diffusion
適用領域：單晶生長、外延生長 Relevant Industries: Single Crystal Growth, Epitaxial Growth 適用材料: ?GaN（單晶）、AIN（單晶/外延）、Ga2O3（外延） Suitable for Processing: GaN (single crystal),AlN (single crystal / epitaxial)Ga2O3 (epitaxial) 晶圓尺寸:? 12/8/6 英寸 Wafer Size: 12/8/6? inch
適用領域：單晶生長、外延生長 Relevant Industries: Single Crystal Growth, Epitaxial Growth 適用材料: ?GaN（單晶）、AIN（單晶/外延）、Ga2O3（外延） Suitable for Processing: GaN (single crystal),AlN (single crystal / epitaxial)Ga2O3 (epitaxial) 晶圓尺寸:12/ 8/6 英寸 Wafer Size: 12/8/6 inch
適用領域：單晶生長 Relevant Industries: ?Single Crystal Growth 適用材料: ?SiC、AIN Suitable for Processing: ?SiC (Silicon Carbide), AlN (Aluminum Nitride) 晶圓尺寸: ?12/8 英寸 Wafer Size: 12/8 inch
適用領域：單晶生長 Relevant Industries: ?Single Crystal Growth 適用材料: ?Si、AIN Suitable for Processing: ?SiC (Silicon Carbide), AlN (Aluminum Nitride) 晶圓尺寸: ?12/8 英寸 Wafer Size: 12/8 inch